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データシートサーチシステム |
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データシートサーチシステム |
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DB3 データシート(PDF) 1 Page - Tiger Electronic Co.,Ltd |
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DB3 データシート(HTML) 1 Page - Tiger Electronic Co.,Ltd |
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1 / 2 page  ABSOLUTE RATINGS Power dissipation on printed TA=50 oC circuit (L=10mm) Pc mW Repetitive peak on-state tp=20 S current f=120Hz ITRM A Operating junction temperature TJ oC Storage temperature TSTG oC Min 28 35 Typ 32 40 Max 36 45 Output voltage (NOTE 1) Vo Min V Breakover current (NOTE 1) IBO Max A Rise time (NOTE 1) tr Typ S Leakage current (NOTE 1) IR Max A 2.Connected in parallel w ith the devices NOTE: 1.Electrical characteristics applicable in both forw ard and reverse dirctions. 5.0 5.0 100.0 1.5 V R=0.5 VBO See FIG.1 10.0 C=22nf(NOTE 2) Breakover voltage (NOTE 1) Breakover voltage symmetry Dynamic breakover voltage (NOTE 1) VBO UNITS 150.0 I+VBO I- I-VBOI I± VI C=22nf(NOTE 2) See FIG.1 I=(IBO to IF=10mA) See FIG.1 V V ±3.0 V Parameters Symbols UNITS DB3,DB4 VOLTAGE RANGE: 28-45 V The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse 1111current,The breakover symmetry is within three 1111volts(DB3,DB4). These diacs are intended for use in CCCthyrisitors phase control,circuits for lamp dimming, FFFI universal motor speed control,and heat control. Parameters See FIG.3 2.0 -40--- +125 C=22nf(NOTE 2) See FIG.1 ELECTRICAL CHARACTERISTICS Test Conditions -40--- +125 DB3 DB4 See FIG.2 Max Min DB3/DB4 Silicon Bidirectional Diacs DO-35 Dimensions in inches and (millimeters) Features TIGER ELECTRONIC CO.,LTD |
同様の部品番号 - DB3 |
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同様の説明 - DB3 |
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