TIP31C datasheet(1/1 Pages) TGS

部品番号	TIP31C

部品情報	Complementary Silicon Power Ttransistors

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メーカー	TGS [Tiger Electronic Co.,Ltd]

ホームページ	http://www.tgselec.com

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TO-220

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

100

V

Collector-Emitter Voltage

V

CEO

100

V

Emitter-Base Voltage

V

EBO

5

V

Collector Current

I

C

3.0

A

Base Current

I

B

1.0

A

Total Dissipation at

P

tot

40

W

Max. Operating Junction Temperature

T

j

150

oC

Storage Temperature

T

stg

-55~150

oC

TIP31C / TIP32C

DESCRIPTION

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Collector Cut-off Current

ICEO

V

CB=100V, IE=0

0.3

mA

Emitter Cut-off Current

IEBO

V

EB=5V, IC=0

1.0

mA

Collector-Emitter Sustaining Voltage

VCEO

I

C=30mA, IB=0

100

V

DC Current Gain

hFE(1)

V

CE=4V, IC=1.0A

25

hFE(2)

V

CE=4V, IC=3.0A

10

50

Collector-Emitter Saturation Voltage

VCE(sat) I

C=3A,IB=300mA

1.2

V

Base-Emitter Saturation Voltage

VBE(sat) V

CE=4V,IC=3.0A

1.8

V

Current Gain Bandwidth Product

fT

V

CE=10V,IC=500mA

3

MHz

Complementary Silicon Power Ttransistors

Product specification

It is intented for use in power

amplifier and switching applications.

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)

O

( Ta = 25 C)

O

TIGER ELECTRONIC CO.,LTD

同様の部品番号 - TIP31C

メーカー	部品番号	データシート	部品情報
Mospec Semiconductor	TIP31C	192Kb / 4P	POWER TRANSISTORS(3A,40-100V,40W)
Motorola, Inc	TIP31C	196Kb / 6P	POWER TRANSISTORS COMPLEMENTARY SILICON
ON Semiconductor	TIP31C	196Kb / 6P	POWER TRANSISTORS COMPLEMENTARY SILICON REV 1
Power Innovations Ltd	TIP31C	86Kb / 6P	NPN SILICON POWER TRANSISTORS
STMicroelectronics	TIP31C	64Kb / 5P	COMPLEMENTARY SILICON POWER TRANSISTORS Oct-1999

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