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SBP1710-R データシート(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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SBP1710-R データシート(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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1 / 6 page ![]() SB SB SB SBP1710-R P1710-R P1710-R P1710-R Rev.A01 Jun.2011 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. High Voltage Fast-Switching NPN Power Transistor Features ■ Very high switching speed ■ High Voltage Capability ■ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter Test Conditions Value Units VCBO Collect-Emitter Voltage VBE=0 900 V VCEO Collector-Emitter Voltage IB=0 500 V VEBO Emitter-Base Voltage IC=0 7 V IC Collector Current 7 A ICP Collector pulse Current (Note) 14 A PC Total Dissipation at Tc=25℃ 45 W TJ Operation Junction Temperature 150 ℃ TSTG Storage Temperature -55~150 ℃ T111-3 |
同様の部品番号 - SBP1710-R |
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同様の説明 - SBP1710-R |
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