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WBN13002LD データシート(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WBN13002LD データシート(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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2 / 5 page  W W W WBN1300 BN1300 BN1300 BN13002LD 2LD 2LD 2LD 2/5 Steady, Steady, Steady, Steady, keep keep keep keep you you you you advance advance advance advance Electrical Characteristics(Tc=25℃ unless otherwise noted) Symbol Parameter Test Conditions Value Units Min Typ Max VCEO(sus) Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0 200 - - V VCE(sat) Collector-Emitter Saturation Voltage Ic=0.5A,Ib=0.1A Ic=1.0A,Ib=0.25A - - 1.0 1.5 V VBE(sat) Base -Emitter Saturation voltage Ic=0.5A,Ib=0.1A Ic=1.0A,Ib=0.25A - - 1.0 1.5 V ICBO Collector- Base Cutoff Current Vcb=350V, Ie=0 - - 100 µA ICEO Collector- Emitter Cutoff Current Vce=200V, Ib=0 - - 50 µA IEBO Emitter- Base Cutoff Current Veb=7V, Ic=0 - - 10 µA hFE DC Current Gain Vce=5V,Ic=0.2A Vce=5V,Ic=1.0A 8 5 - - 50 - ts tf Storage Time Fall Time VCC=24V,Ic=0.5A IB1=-IB2=0.1A - - 1.8 0.21 4.0 0.5 µs fT Current Gain Bandwidth Product Vce=10v,Ic=0.5A 4 - - MHz Note: Pulse Test : Pulse width 300,Duty cycle 2% |
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