2SC232A

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 2

www.unisonic.com.tw

QW-R211-008,C

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

30

V

Collector-Emitter Voltage

30

V

Emitter-Base Voltage

5

V

Collector Dissipation

TO-92

500

mW

TO-92NL

625

Collector Current

2

A

Junction Temperature

150

℃

Storage Temperature

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

30

V

Collector-Emitter Breakdown Voltage

30

V

Emitter-Base Breakdown Voltage

5

V

Collector Cut-Off Current

100

nA

Emitter Cut-Off Current

100

nA

DC Current Gain (Note)

100

320

Base-Emitter On Voltage

1

V

Collector-Emitter Saturation Voltage

2

V

Output Capacitace

30

pF

Current Gain Bandwidth Product

120

MHz

RANK

O

Y

RANGE

100-200

160-320

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.