データシートサーチシステム
  Japanese  ▼
ALLDATASHEET.JP

X  

Preview PDF HTML

3N65Z データシート(PDF) 2 Page - Unisonic Technologies

部品番号 3N65Z
部品情報  3A, 650V N-CHANNEL POWER MOSFET
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
メーカー  UTC [Unisonic Technologies]
ホームページ  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

3N65Z データシート(HTML) 2 Page - Unisonic Technologies

  3N65Z Datasheet HTML 1Page - Unisonic Technologies 3N65Z Datasheet HTML 2Page - Unisonic Technologies 3N65Z Datasheet HTML 3Page - Unisonic Technologies 3N65Z Datasheet HTML 4Page - Unisonic Technologies 3N65Z Datasheet HTML 5Page - Unisonic Technologies 3N65Z Datasheet HTML 6Page - Unisonic Technologies 3N65Z Datasheet HTML 7Page - Unisonic Technologies 3N65Z Datasheet HTML 8Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
3N65Z
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 8
www.unisonic.com.tw
QW-R502-746.A
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
3.0
A
Continuous Drain Current
ID
3.0
A
Pulsed Drain Current (Note 2)
IDM
12
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
200
mJ
Repetitive (Note 2)
EAR
7.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
PD
34
W
Junction Temperature
TJ
+150
℃
Operating Temperature
TOPR
-55 ~ +150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 64mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤ 3.0A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATING
UNIT
Junction to Ambient
θJA
62.5
°C/W
Junction to Case
θJC
3.68
°C/W
ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 μA
650
V
Drain-Source Leakage Current
IDSS
VDS = 650 V, VGS = 0 V
10
μA
Gate-Source Leakage Current
Forward
IGSS
VGS = 30 V, VDS = 0 V
100
nA
Reverse
VGS = -30 V, VDS = 0 V
-100
nA
Breakdown Voltage Temperature Coefficient
BV
△
DSS/△TJ
ID=250μA,Referenced to 25°C
0.6
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 1.5A
2.9
3.8
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
f = 1MHz
350
450
pF
Output Capacitance
COSS
50
65
pF
Reverse Transfer Capacitance
CRSS
5.5
7.5
pF



Html Pages

1 2 3 4 5 6 7 8


データシート ダウンロード

Go To PDF Page


リンク URL



ALLDATASHEETはお客様のビジネスに役立ちますか？  [ DONATE ] 

Alldatasheetは   |   広告   |   お問い合わせ   |   プライバシーポリシー   |   データシートへのリンク    |   リンク交換   |   メーカーリスト
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com