12N06L-TN3-R datasheet(2/5 Pages) UTC

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12N06

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-561.a

ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage (VGS=0)

VDSS

Drain-Gate Voltage (RGS=20KΩ))

VDGR

Gate-Source Voltage

VGSS

±20

TC = 25°C

Continuous

TC = 100°C

8.5

Drain Current

Pulsed (Note 2)

IDM

Power Dissipation

Derating Factor

0.2

W/°C

Peak Diode Recovery dv/dt (Note 3)

dv/dt

V/ns

Avalanche Energy (Note 4)

EAS

100

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Note: 1 Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by safe operating area

3. ISD ≤ 12A, di/dt ≤ 200A/µs, VDS ≤ 40V, TJ ≤ TJMAX

4. Starting TJ = 25°C, ID = 6A, VDD = 30V

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

100

°C/W

Junction to Case

θJC

°C/W

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