14N50

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-720.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

500

V

Gate-Source Voltage

±30

V

Continuous Drain Current

14

A

Pulsed Drain Current (Note 2)

48

A

Avalanche Current (Note 2)

14

A

Single Pulsed Avalanche Energy (Note 3)

400

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

150

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

0.83

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

500

V

Drain-Source Leakage Current

10

μA

Gate-Source Leakage Current

100

nA

-100

nA

Breakdown Voltage Temperature Coefficient

BV

△

0.5

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

3

3.75 4.5

V

Static Drain-Source On-State Resistance

0.34 0.38

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

f=1.0MHz

2000

pF

Output Capacitance

238

pF

Reverse Transfer Capacitance

55

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

24

nS

Turn-On Rise Time

16

nS

Turn-Off Delay Time

54

nS

Turn-Off Fall Time

12

nS

Total Gate Charge

69

92

nC

Gate-Source Charge

12

nC

Gate-Drain Charge

31

nC