PUMT1

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 2

www.unisonic.com.tw

QW-R218-001.Da

The following characteristics apply to both TR1 and TR2.

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

-50

V

Collector-Emitter Voltage

-40

V

Emitter-Base Voltage

-5

V

Collector Current (DC)

-100

mA

Peak Collector Current

-200

mA

Peak Base Current

-200

mA

Collector Power Dissipation

300

mW

Junction Temperature

150

°C

Storage Temperature

-65 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

CONDITION

MIN

TYP

MAX

UNIT

Collector Cut-Off Current

-100

nA

-10

μA

Emitter Cut-Off Current

-100

nA

DC Current Gain

120

Collector-Emitter Saturation Voltage

-200

mV

Collector Capacitance

Cc

2.2

pF

Transition Frequency

100

MHz

Note: 1. Pulse test: Pulse Width≤300μs, Duty Cycle≤2.0%

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.