DTA114EL-AN3-R datasheet(2/3 Pages) UTC

2 / 3 page

DTA114E

PNP SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

2 of 3

www.unisonic.com.tw

QW-R206-046,E

ABSOLUATE MAXIUM RATINGS (TA = 25℃)

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA= 25℃, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Input Voltage

VIN(OFF)

VCC= -5V, IOUT= -100μA

-0.5

VIN(ON)

VOUT= -0.3V, IOUT= -10mA

-3

Output Voltage

VOUT(ON) IOUT/IIN= -10mA/-0.5mA

-0.3

Input Current

IIN

VIN= -5V

-0.88

Output Current

IOUT(OFF) VCC= -50V , VIN=0V

-0.5

µA

DC Current Gain

hFE

VOUT= -5V, IOUT= -5mA

Input Resistance

kΩ

Resistance Ratio

R2/R1

0.8

1.2

Transition Frequency

VCE= -10 V, IE=5mA, f=100MHz

250

MHz

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VCC

-50

Input Voltage

VIN

-40 ~ +10

Output Current

IOUT(MAX)

-100

Power Dissipation

SOT-523

150

SOT-23/SOT-323

200

TO-92

625

TO-92SP

550

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

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