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UT100N03G-Q-TQ2-R データシート(PDF) 2 Page - Unisonic Technologies

部品番号 UT100N03G-Q-TQ2-R
部品情報  100A, 30V N-CHANNEL POWER MOSFET
PDF  5 Pages
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メーカー  UTC [Unisonic Technologies]
ホームページ  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT100N03G-Q-TQ2-R データシート(HTML) 2 Page - Unisonic Technologies

  UT100N03G-Q-TQ2-R Datasheet HTML 1Page - Unisonic Technologies UT100N03G-Q-TQ2-R Datasheet HTML 2Page - Unisonic Technologies UT100N03G-Q-TQ2-R Datasheet HTML 3Page - Unisonic Technologies UT100N03G-Q-TQ2-R Datasheet HTML 4Page - Unisonic Technologies UT100N03G-Q-TQ2-R Datasheet HTML 5Page - Unisonic Technologies  
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UT100N03-Q
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-625.A
ABSOLUTE MAXIMUM RATINGS (TC =25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
100
A
Pulsed Drain Current (Note 2)
IDM
400
A
Single Pulsed Avalanche Current (Note 3)
IAS
35
A
Single Pulsed Avalanche Energy (Note 3)
EAS
875
mJ
100
W
Power Dissipation
Derate above 25℃
PD
0.67
W/℃
Junction Temperature
TJ
+175
℃
Strong Temperature
TSTG
-55 ~ +175
℃
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by maximum junction temperature
3. L = 0.5mH, IAS = 35A, VDD = 25V, RG = 25Ω, Starting TJ = 25℃.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62.5
℃
/W
Junction to Case
θJC
1.5
℃
/W
ELECTRICAL CHARACTERISTICS (TJ =25℃, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =250 µA
30
V
Drain-Source Leakage Current
IDSS
VDS=30 V,VGS =0 V
1
µA
Gate-Source Leakage Current
IGSS
VDS =0 V, VGS = ±20 V
±100
nA
ON CHARACTERISTICS
(Note2)
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =250 µA
1
3
V
VGS =10 V, ID =50 A
3.36
5.3
Static Drain-Source On-Resistance
RDS(ON)
VGS =4.5 V, ID =40 A
5.25
8
mΩ
DYNAMIC PARAMETERS
(Note3)
Input Capacitance
CISS
8075
Output Capacitance
COSS
680
Reverse Transfer Capacitance
CRSS
VDS =15V, VGS =0V, f=1.0MHz
255
pF
SWITCHING PARAMETERS
(Note3)
Total Gate Charge
QG
42.5 55.25
Gate Source Charge
QGS
17.68
Gate Drain Charge
QGD
VDS =15V, VGS =5V, ID =16A
16.15
nC
Turn-ON Delay Time
tD(ON)
25.7
50
Turn-ON Rise Time
tR
10
20
Turn-OFF Delay Time
tD(OFF)
128
200
Turn-OFF Fall-Time
tF
VDD=15V, ID =1A, RGEN =6Ω
VGS =10 V
34
70
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=20 A,VGS=0 V
1.5
V
Drain-Source Diode Forward Current
IS
90
A
Note:
1. Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%.
2. Guaranteed by design, not subject to production testing.



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