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UT2312L-AE3-R データシート(PDF) 1 Page - Unisonic Technologies |
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UT2312L-AE3-R データシート(HTML) 1 Page - Unisonic Technologies |
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1 / 3 page  UNISONIC TECHNOLOGIES CO., LTD UT2312 Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2009 Unisonic Technologies Co., Ltd QW-R502-205.D 20V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UT2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 33 mΩ @VGS = 4.5 V * RDS(ON) = 40 mΩ @VGS = 2.5 V * Advanced trench process technology * Excellent thermal and electrical capabilities * High density cell design for ultra low on-resistance SYMBOL 2.Gate 1.Source 3.Drain ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing UT2312L-AE3-R UT2312G-AE3-R SOT-23 S G D Tape Reel MARKING 23N L: Lead Free G: Halogen Free |
同様の部品番号 - UT2312L-AE3-R |
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同様の説明 - UT2312L-AE3-R |
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