UT2312G-AE3-R datasheet(1/3 Pages) UTC

部品番号	UT2312G-AE3-R

部品情報	20V N-CHANNEL ENHANCEMENT MODE MOSFET

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メーカー	UTC [Unisonic Technologies]

ホームページ	http://www.utc-ic.com

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1 / 3 page

UNISONIC TECHNOLOGIES CO., LTD

UT2312

Power MOSFET

www.unisonic.com.tw

1 of 3

QW-R502-205.D

20V N-CHANNEL

ENHANCEMENT MODE MOSFET

DESCRIPTION

The UT2312 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in PWM

applications.

FEATURES

* RDS(ON) = 33 mΩ @VGS = 4.5 V

* RDS(ON) = 40 mΩ @VGS = 2.5 V

* Advanced trench process technology

* Excellent thermal and electrical capabilities

* High density cell design for ultra low on-resistance

SYMBOL

2.Gate

1.Source

3.Drain

ORDERING INFORMATION

Ordering Number

Pin Assignment

Lead Free

Halogen Free

Package

1

2

3

Packing

UT2312L-AE3-R

UT2312G-AE3-R

SOT-23

S

G

D

Tape Reel

MARKING

23N

L: Lead Free

G: Halogen Free

同様の部品番号 - UT2312G-AE3-R

メーカー	部品番号	データシート	部品情報
Unisonic Technologies	UT2312G-AE3-R	174Kb / 3P	N-CHANNEL ENHANCEMENT MODE MOSFET

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