UT3009G-TN3-R datasheet(2/4 Pages) UTC

2 / 4 page

UT3009

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-624.a

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

TC=25°C

Continuous

VGS@10V (Note 1) TC=100°C

Drain Current

Pulsed (Note 2)

IDM

155

Avalanche Current

IAR

Single Pulsed Avalanche Energy (Note 3)

EAS

252

Power Dissipation (TC=25°C) (Note 4)

Junction Temperature

-55~175

°C

Storage Temperature

TSTG

-55~175

°C

Note:

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note 1)

θJA

°C/W

Junction to Case (Note 1)

θJC

2.8

°C/W

Notes: 1. The data tested by surface mounted on a 1 inch

2 FR-4 board with 2OZ copper.

2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.

3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=48A.

4. The power dissipation is limited by 175°C junction temperature.

UT3009G-TN3-R データシート(PDF) 2 Page - Unisonic Technologies

UT3009G-TN3-R データシート(HTML) 2 Page - Unisonic Technologies

Html Pages

1 2 3 4

データシートダウンロード