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UT3414G-AE3-R データシート(PDF) 1 Page - Unisonic Technologies |
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UT3414G-AE3-R データシート(HTML) 1 Page - Unisonic Technologies |
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1 / 4 page ![]() UNISONIC TECHNOLOGIES CO., LTD UT3414 Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2009 Unisonic Technologies Co., Ltd QW-R502-248.E N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) < 50mΩ @VGS = 4.5V * RDS(ON) < 63mΩ @VGS = 2.5V * RDS(ON) < 87mΩ @VGS = 1.8V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing UT3414L-AE3-R UT3414G-AE3-R SOT-23 S G D Tape Reel MARKING 34Q L: Lead Free G: Halogen Free |
同様の部品番号 - UT3414G-AE3-R |
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同様の説明 - UT3414G-AE3-R |
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