UT3418G-AE3-R datasheet(1/3 Pages) UTC

部品番号	UT3418G-AE3-R

部品情報	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	3 Pages

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メーカー	UTC [Unisonic Technologies]

ホームページ	http://www.utc-ic.com

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1 / 3 page

UNISONIC TECHNOLOGIES CO., LTD

UT3418

Power MOSFET

www.unisonic.com.tw

1 of 3

QW-R502-226.D

N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT

TRANSISTOR

DESCRIPTION

The UT3418 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in

PWM applications.

FEATURES

* RDS(ON) < 60mΩ @VGS = 10 V

* RDS(ON) < 70mΩ @VGS = 4.5 V

* RDS(ON) < 155mΩ @VGS = 2.5 V

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified

SYMBOL

2.Gate

1.Source

3.Drain

ORDERING INFORMATION

Ordering Number

Pin Assignment

Lead Free

Halogen Free

Package

1

2

3

Packing

UT3418L-AE3-R

UT3418G-AE3-R

SOT-23

S

G

D

Tape Reel

MARKING

34U

L: Lead Free

G: Halogen Free

同様の部品番号 - UT3418G-AE3-R

メーカー	部品番号	データシート	部品情報
Unisonic Technologies	UT3418G-AE3-R	173Kb / 3P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
VBsemi Electronics Co.,...	UT3418G-AE3-R	492Kb / 9P	N-Channel 30-V (D-S) MOSFET

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