UT3419L-AE3-R datasheet(1/3 Pages) UTC

部品番号	UT3419L-AE3-R

部品情報	20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

メーカー	UTC [Unisonic Technologies]

ホームページ	http://www.utc-ic.com

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1 / 3 page

UNISONIC TECHNOLOGIES CO., LTD

UT3419

Power MOSFET

www.unisonic.com.tw

1 of 3

QW-R502-391.C

20V, 3.5A P-CHANNEL

ENHANCEMENT MODE FIELD

EFFECT TRANSISTOR

DESCRIPTION

The UTC UT3419 is a P-channel enhancement MOSFET

providing designers with excellent RDS(ON), low gate charge. The

gate voltage is as low as 2.5V. It is ESD protection.

The UTC UT3419 can be applied in PWM applications or

used as a load switch.

FEATURES

* ESD Rating Is Up To 2000V HBM

* RDS(ON) < 75mΩ (VGS = -10V)

RDS(ON) < 95mΩ (VGS = -4.5V)

RDS(ON) < 145mΩ (VGS = -2.5V)

SYMBOL

ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

Lead Free

Halogen Free

1

2

3

UT3419L-AE3-R

UT3419G-AE3-R

SOT-23

S

G

D

Tape Reel

MARKING

34V

G: Halogen Free

L: Lead Free

同様の部品番号 - UT3419L-AE3-R

メーカー	部品番号	データシート	部品情報
Unisonic Technologies	UT3419G-AE2-R	204Kb / 4P	ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Unisonic Technologies	UT3419G-AE3-R	204Kb / 4P	ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
VBsemi Electronics Co.,...	UT3419G-AE3-R	472Kb / 9P	P-Channel 20-V (D-S) MOSFET
Unisonic Technologies	UT3419	204Kb / 4P	ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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