UT4446-S08-R datasheet(1/5 Pages) UTC

部品番号	UT4446-S08-R

部品情報	N-CHANNEL ENHANCEMENT MODE

PDF	5 Pages

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メーカー	UTC [Unisonic Technologies]

ホームページ	http://www.utc-ic.com

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UNISONIC TECHNOLOGIES CO., LTD

UT4446

Power MOSFET

www.unisonic.com.tw

1 of 6

QW-R502-251.A

N-CHANNEL

ENHANCEMENT MODE

DESCRIPTION

The UT4446 uses UTC’s advanced trench technology to

provide excellent RDS(ON), low gate charge and operation with low

gate voltages. This device is suitable for use as a load switch or

in PWM applications.

FEATURES

* RDS(ON)< 8.5mΩ @VGS=10V

* RDS(ON)< 14.5mΩ @VGS=4.5V

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified

SYMBOL

1.Gate

3.Source

2.Drain

SOP-8

Lead-free:

UT4446L

Halogen-free: UT4446G

ORDERING INFORMATION

Ordering Number

Normal

Lead Free

Halogen Free

Package

Packing

UT4446-S08-R

UT4446L-S08-R

UT4446G-S08-R

SOP-8

Tape Reel

UT4446-S08-T

UT4446L-S08-T

UT4446G-S08-T

SOP-8

Tube

同様の部品番号 - UT4446-S08-R

メーカー	部品番号	データシート	部品情報
VBsemi Electronics Co.,...	UT4446G-S08-R	1Mb / 9P	N-Channel 30-V (D-S) MOSFET
SHENZHEN DOINGTER SEMIC...	UT4446G-S08-R	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMIC...	UT4446G-SO8-R	920Kb / 5P	N-Channel MOSFET uses advanced trench technology
VBsemi Electronics Co.,...	UT4446L-S08-R	1Mb / 9P	N-Channel 30-V (D-S) MOSFET
Unisonic Technologies	UT4446	214Kb / 4P	N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

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