UTD413L-TN3-R datasheet(1/4 Pages) UTC

部品番号	UTD413L-TN3-R

部品情報	P-CHANNEL ENHANCEMENT MODE

PDF	4 Pages

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メーカー	UTC [Unisonic Technologies]

ホームページ	http://www.utc-ic.com

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1 / 4 page

UNISONIC TECHNOLOGIES CO., LTD

UTD413

Power MOSFET

www.unisonic.com.tw

1 of 4

QW-R502-246.C

P-CHANNEL

ENHANCEMENT MODE

DESCRIPTION

The UTD413 can provide excellent RDS(ON) and low gate charge

by using UTC’s advanced trench technology. The UTD413 is well

suited for high current load applications with the excellent thermal

resistance of the TO-252 package. Standard Product UTD413 is

Pb-free.

FEATURES

* RDS(ON) < 45mΩ @VGS = -10V

* RDS(ON) < 69mΩ @VGS = -4.5V

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified

SYMBOL

1.Gate

3.Source

2.Drain

ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

Lead Free

Halogen Free

1

2

3

UTD413L-TN3-R

UTD413G-TN3-R

TO-252

G

D

S

Tape Reel

UTD413L-TN3-T

UTD413G-TN3-T

TO-252

G

D

S

Tube

同様の部品番号 - UTD413L-TN3-R

メーカー	部品番号	データシート	部品情報
Unisonic Technologies	UTD413L-TN3-R	209Kb / 4P	P-CHANNEL ENHANCEMENT MOSFET

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