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CDST226-G データシート(PDF) 1 Page - Comchip Technology

部品番号 CDST226-G
部品情報  SMD Switching Diode
PDF  2 Pages
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メーカー  COMCHIP [Comchip Technology]
ホームページ  http://www.comchiptech.com
Logo COMCHIP - Comchip Technology

CDST226-G データシート(HTML) 1 Page - Comchip Technology

  CDST226-G Datasheet HTML 1Page - Comchip Technology CDST226-G Datasheet HTML 2Page - Comchip Technology  
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CDST226-G
Features
O
-Power dissipation: 150mW (@TA=25
C)
Mechanical data
-Case: SOT-23
-Terminals: Solder plated, solderable per MIL-
STD-750, Method 2026.
-Marking: C3
Page 1
QW-B0024
SMD Switching Diode
RoHS Device
Maximum Rating (at Ta=25°C unless otherwise noted)
REV:B
mA
V
V
-55 ~ +125
100
TSTG
VRM
VRRM
VRWM
VR
IO
Power dissipation
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
Non-Repetitive peak reverse voltage
Parameter
Symbol
Limits
Unit
Average rectified output current
Storage temperature range
PD
150
mW
SOT-23
Dimensions in inches and (millimeters)
0.066 (1.70)
0.119 (3.00)
0.110 (2.80)
0.103 (2.60)
0.086 (2.20)
0.020 (0.50)
0.013 (0.35)
0.056 (1.40)
0.047 (1.20)
0.044 (1.10)
0.035 (0.90)
0.083 (2.10)
0.007 (0.20) min
0.006 (0.15) max
0.006 (0.15)
0.002 (0.05)
80
85
OC
Electrical Characteristics (at Ta=25°C unless otherwise noted)
pF
V
μA
4
1.2
IR
CT
Forward voltage
Diode capacitance
Reverse breakdown voltage
Parameter
Symbol
Min
Max
Unit
Reverse leakage current
Test Conditions
80
VBR
Forward continuous current
Peak forward surge current
@10mS
IFM
IFSM
300
2
mA
A
VF
IR=100μA
0.5
VR=80V
IF=100mA
3
V
Reverse recovery time
trr
VR=0V, f=1MHz
nS


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