2DB1132P-13 datasheet(3/6 Pages) DIODES

3 / 6 page

2DB1132P/Q/R

Document number: DS31142 Rev: 5 - 2

3 of 6

www.diodes.com

September 2011

2DB1132P/Q/R

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-40

IC = -50µA

Collector-Emitter Breakdown Voltage (Note 6)

BVCEO

-32

IC = -1mA

Emitter-Base Breakdown Voltage

BVEBO

-5

IE = -50µA

Collector Cut-off Current

ICBO

-0.5

µA

VCB =-20V

Emitter Cut-off Current

IEBO

-0.5

µA

VEB = -4V

Static Forward Current Transfer

Ratio (Note 6)

2DB1132P

hFE

180

IC = -100mA, VCE = -3V

2DB1132Q

120

270

2DB1132R

180

390

Collector-Emitter saturation Voltage (Note 6)

VCE(sat)

-125

-500

IC =-500mA, IB = -50mA

Transition frequency

190

MHz

IE = 50mA, VCE = -5V,f=30MHz

Output Capacitance

Cob

IE = 0A, VCB = -10V,f=1MHz

Notes:

6. Measured under pulsed conditions. Pulse width = 300

µs. Duty cycle

≤ 2%

Electrical Characteristics

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.001

0.01

0.1

100

T = -55°C

T = 25°C

T = 85°C

T = 150°C

= -3V

200

300

400

500

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