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SC4530 データシート(PDF) 12 Page - Semtech Corporation |
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SC4530 データシート(HTML) 12 Page - Semtech Corporation |
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12 / 23 page ![]() 2 SC4530 Applications Information (Continued) The C 3 voltage increases with each subsequent switching cycle, as does the bootstrapped voltage at the BST pin. After a number of switching cycles, C 3 will be fully charged to a voltage approximately equal to that applied to the anode of D 2. The minimum BST to SW voltage required to fully saturate the power transistor is shown in the Typical Characteristics (pages 6-7). This difference voltage must be at least .72V at room temperature. This is also specified in the Electrical Characteristics (pages 3-4) as the Minimum Bootstrap Voltage. The minimum required V C3 increases as temperature decreases. The bootstrap circuit reaches equilibrium when the base charge drawn from C 3 during transistor on-time is equal to the charge replenished during the off interval. Figure 4 summarizes various ways of bootstrapping the SC4530. In Figure 4(a) the BIAS pin is connected to the converter output. The bootstrap charge is obtained from the output of the step-down converter. The input- referred charge is reduced by the step-down ratio. This is the most efficient configuration and it also results in the least voltage stress at the BST pin. The maximum BST pin voltage is about V IN + VOUT. If the output voltage is between 2.5V and 3V, then a 0.33-0.47mF bootstrap capacitor may be needed to reduce droop. In most other cases, a 0.22mF ceramic capacitor is adequate. Figure 4(b) shows the SC4530 can also be bootstrapped from the input. This way it is not as efficient as the configuration shown in Figure 4(a). However this may be only option if the output voltage is less than 2.5V and there is no other supply with voltage higher than 2.5V. Voltage stress at the BST pin can be somewhat higher than 2V IN. The BST pin voltage should not exceed its absolute maximum rating of 42V. Figure 4(c) shows how to bootstrap the SC4530 from an independent power supply V S with its voltage > 2.5V. To demonstrate the effect of an under-sized bootstrap capacitor, C 3 (Figure , page ) is deliberately reduced to 0nF. TheBIASpinistiedtoanexternalpowersupplysimilar to Figure 4(c). By adjusting the external supply voltage (d) (e) (c) VS > 2.5V SC4530 BST GND IN SW BIAS 0.1µF VOUT VIN C3 Max VBST ˜ VIN + VS SC4530 BST GND IN SW DZ - VZ + BIAS VOUT VIN C3 VBST ˜ 2VIN - VZ VIN – VZ > 2.5V (a) SC4530 BST GND IN SW C3 VIN BIAS Max VBST ˜ VIN + VOUT VOUT > 2.5V (b) SC4530 BST GND IN SW BIAS C3 VIN Max VBST ˜ 2VIN VOUT < 2.5V VOUT > VZ + 2.5V SC4530 BST GND IN SW C3 VIN BIAS DZ - VZ + VBST ˜ VIN + VOUT -VZ 0.1µF Figure 4. Methods of Bootstrapping the SC4530 |
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