BAS20HT1G datasheet(2/3 Pages) ONSEMI

部品番号	BAS20HT1G

部品情報	High Voltage Switching Diode

PDF	3 Pages

Scroll/Zoom	100%

メーカー	ONSEMI [ON Semiconductor]

ホームページ	http://www.onsemi.com

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2 / 3 page

BAS20HT1, SBAS20HT1G

http://onsemi.com

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.

Notes: 3. tp » trr

+10 V

2.0 k

820 W

0.1 mF

D.U.T.

100 mH

0.1 mF

50 W Output

Pulse

Generator

50 W Input

Sampling

Oscilloscope

10%

90%

trr

iR(REC) = 3.0 mA

OUTPUT PULSE

(IF = IR = 30 mA; MEASURED

at iR(REC) = 3.0 mA)

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

Figure 2. Forward Current

Figure 3. Leakage Current

1000

VF, FORWARD VOLTAGE (V)

0.1

0.2

0.4

0.6

100

1.0

0.8

1.0

1.2

1.4

100

VR, REVERSE VOLTAGE (V)

1.0

0.001

0.1

100

150

200

250

0.01

300

125°C

150°C

−40°C

25°C

55°C

125°C

150°C

−40°C

25°C

55°C

Figure 4. Total Capacitance

2.0

VR, REVERSE VOLTAGE (V)

5.0

1.8

0.4

0.2

0.8

0.6

1.2

1.0

1.6

1.4

f = 1 MHz

IE = 0 A

TA = 25°C

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