MGSF3454VT1

4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 7. Source–Drain Diode Forward Voltage

Figure 8. On–Resistance vs. Gate–to–Source Voltage

Figure 9. Threshold Voltage

Square Wave Pulse Duration (sec)

2

0.1

0.01

1.0E–04

1.0E–03

1.0E–02

1.0E–01

1.0E+00

1.0E+01

Figure 10. Single Pulse Power

Figure 11. Normalized Thermal Transient Impedance, Junction–to–Ambient

TJ, TEMPERATURE (°C)

25

50

75

100

125

ID = 250 µA

150

–0.8

0.4

0.2

0.0

–0.2

–0.4

–0.6

0

VSD, SOURCE–TO–DRAIN VOLTAGE (V)

1

10

40

TJ = 150°C

0

0.25

0.50

0.75

1.00

1.25

1.5

1.75

02

4

6

8

10

0

0.04

0.08

0.12

VGS – GATE–TO–SOURCE VOLTAGE (V)

0.16

0.20

ID = 4.2 A

0.01

0.10

1.00

10.00

0

6

12

18

TIME (sec)

24

30

TJ = 25°C

–25

–50

1

0.2

Duty Cycle = 0.5

0.05

SINGLE PULSE

0.1

0.02

R

θJC(t) = r(t) RθJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) R

θJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2