IS61WV6416DBLLSLASHDBLS datasheet(10/21 Pages) ISSI

部品番号	IS61WV6416DBLL/DBLS

部品情報	64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

PDF	21 Pages

Scroll/Zoom	100%

メーカー	ISSI [Integrated Silicon Solution, Inc]

ホームページ	http://www.issi.com

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10 / 21 page

Integrated Silicon Solution, Inc. — www.issi.com

Rev. A

11/18/2010

IS61WV6416DALL/DALS, IS61WV6416DBLL/DBLS,

IS64WV6416DBLL/DBLS

READ CYCLE SWITCHING CHARACTERISTICS(1) (OverOperatingRange)

-20 ns

-25 ns

-35 ns

-45 ns

Symbol

Parameter

Min. Max.

Min.

Max.

Unit

trc

ReadCycleTime

20—

25—

35—

45—

tAA

AddressAccessTime

—20

—25

—35

—45

toHA

OutputHoldTime

2.5—

6—

8—

10—

tAce

AccessTime

—20

—25

—35

—45

tdoe

AccessTime

—8

—12

—15

—20

tHzoe(2)

toHigh-ZOutput

010

tLzoe(2)

toLow-ZOutput

0—

—

tHzce(2

toHigh-ZOutput

010

tLzce(2)

toLow-ZOutput

3—

10—

tbA

,UBAccessTime

—8

—25

—35

—45

tHzb

,UBtoHigh-ZOutput

010

tLzb

,UBtoLow-ZOutput

0—

—

Notes:

1. Testconditionsassumesignaltransitiontimesof1.5nsorless,timingreferencelevelsof1.25V,inputpulselevelsof0.4Vto

Vdd-0.3VandoutputloadingspecifiedinFigure1a.

2. TestedwiththeloadinFigure1b.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.

3. Not100%tested.

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