DSF01S30SC datasheet(1/4 Pages) TOSHIBA

部品番号	DSF01S30SC

部品情報	High-Speed Switching Application

PDF	4 Pages

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メーカー	TOSHIBA [Toshiba Semiconductor]

ホームページ	http://www.semicon.toshiba.co.jp/eng

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1 / 4 page

DSF01S30SC

2009-12-03

1

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

DSF01S30SC

High-Speed Switching Application

Abusolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Reverse voltage

VR

30

V

Average forward current

IO

100*

mA

Surge current (10ms)

IFSM

2

A

Junction temperature

Tj

125

°C

Storage temperature range

Tstg

−55 to 125

°C

*: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad

dimensions of 4 × 4 mm.

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

Forward voltage

VF(1)

―

IF = 10 mA

―

0.27

0.3

V

Forward voltage

VF(2)

―

IF = 100 mA

―

0.41

0.5

V

Reverse current

IR(1)

―

VR = 10 V

―

7

μA

Reverse current

IR(2)

―

VR = 30 V

―

50

μA

Total capacitance

CT

―

VR = 0, f = 1 MHz

⎯

9.3

⎯

pF

Marking

Equivalent Circuit (Top View)

JEDEC

―

JEITA

―

TOSHIBA

1-1R1A

Weight: 0.17 mg (typ.)

Unit: mm

0.27±0.02

１

２

0.32±0.03

0.025±0.015

１： CATHODE

２： ANODE

SC2

同様の部品番号 - DSF01S30SC

メーカー	部品番号	データシート	部品情報
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