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ASW350 データシート(PDF) 1 Page - Advanced Semiconductor Business Inc. |
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ASW350 データシート(HTML) 1 Page - Advanced Semiconductor Business Inc. |
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1 / 4 page ![]() 1/4 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 February 2010 ASW350 5-4000 MHz MMIC Amplifier Parameters Units Typical Frequency MHz 100 250 Gain dB 24.7 23 S11 dB -15 -15 S22 dB -18 -14.5 Output IP3 dBm 41 1) 40 2) Noise Figure dB 8.0 7.1 Output P1dB dBm 23.5 23 Current mA 150 150 Device Voltage V 5 5 1) OIP3 is measured with two tones at an output power of +10 dBm/tone separated by 1 MHz. 2) OIP3 is measured with two tones at an output power of +7 dBm/tone separated by 1 MHz. Parameters Units Min Typ Max Testing Frequency MHz 100 Gain dB 23 24.7 S11 dB -15 S22 dB -18 Output IP3 dBm 39 41 Noise Figure dB 8.0 8.3 Output P1dB dBm 22 23.5 Current mA 135 150 165 Device Voltage V 5 Parameters Rating Operating Case Temperature -40 to +85°C Storage Temperature -40 to +150°C Device Voltage +6 V Operating Junction Temperature +150°C Input RF Power (CW, 50ohm matched)* 25 dBm * Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf Features Description Absolute Maximum Ratings ·24.7 dB Gain at 100 MHz ·23.5 dBm P1dB at 100 MHz ·41 dBm Output IP3 at 100 MHz ·MTTF > 100 Years ·Single Supply The ASW350, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both re- ceiver and transmitter of telecommunication systems up to 4 GHz. The amplifier is available in an SOT-89 package and passes through the stringent DC, RF, and reliability tests. Product Specifications Typical Performance ASW350 Package Style: SOT-89 Application Circuit · IF · 250 MHz Pin Configuration Pin No. Function 1 RF IN 2 GND 3 RF OUT / Bias |
同様の部品番号 - ASW350 |
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同様の説明 - ASW350 |
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