ACE3401B datasheet(1/6 Pages) ACE

部品番号	ACE3401B

部品情報	P-Channel Enhancement Mode Field Effect Transistor

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メーカー	ACE [ACE Technology Co., LTD.]

ホームページ	http://www.ace-ele.com

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ACE3401B

P-Channel Enhancement Mode Field Effect Transistor

VER 1.2

1

Description

The ACE3401B uses advanced trench technology to provide excellent RDS(ON) , low gate charge and

operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general

applications.

Features

 V

DS

(V)=-30V, ID=-4A

 R

DS(ON)

<43m

Ω @ V

GS=-10V

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

-30

V

Gate-Source Voltage

VGSS

±12

V

Drain Current (Continuous)

TA=25

OC

ID

-4

A

TA=70

OC

-3.5

Drain Current (Pulse)

IDM

-30

A

Power Dissipation

TA=25

OC

PD

1.4

W

Operating and Storage Temperature Range TJ,TSTG -55 to 150

OC

Packaging Type

SOT-23-3L

D

3

1

2

G

S

Ordering information

ACE3401B XX + H

SOT-23-3L

Description

1

Gate

2

Source

3

Drain

BM : SOT-23-3L

Pb - free

Halogen - free

同様の部品番号 - ACE3401B

メーカー	部品番号	データシート	部品情報
ACE Technology Co., LTD...	ACE3401BM+H	185Kb / 8P	P-Channel Enhancement Mode MOSFET VER 1.2
ACE Technology Co., LTD...	ACE3401BM+H	603Kb / 7P	P-Channel Enhancement Mode MOSFET VER 1.4

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