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M48T35 データシート(PDF) 20 Page - STMicroelectronics

部品番号 M48T35
部品情報  5 V, 256 Kbit (32 Kb x 8) TIMEKEEPER® SRAM
PDF  28 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M48T35 データシート(HTML) 20 Page - STMicroelectronics

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DC and AC parameters
M48T35, M48T35Y
20/28
Doc ID 2611 Rev 10
Table 10.
Power down/up AC characteristics
Table 11.
Power down/up trip points DC characteristics
Symbol
Parameter(1)
1.
Valid for ambient operating temperature: TA = 0 to 70 or –40 to 85 °C; VCC = 4.75 to 5.5 V or 4.5 to 5.5 V (except where
noted).
Min
Max
Unit
tPD
E or W at VIH before power down
0
µs
tF
(2)
2.
VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200 µs after
VCC passes VPFD (min).
VPFD (max) to VPFD (min) VCC fall time
300
µs
tFB
(3)
3.
VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.
VPFD (min) to VSS VCC fall time
M48T35
10
µs
M48T35Y
10
µs
tR
VPFD (min) to VPFD (max) VCC rise time
10
µs
tRB
VSS to VPFD (min) VCC rise time
1
µs
trec
(4)
4.
trec (min) = 20 ms for industrial temperature grade 6 device.
VPFD (max) to inputs recognized
40
200
ms
Symbol
Parameter(1)(2)
1.
Valid for ambient operating temperature: TA = 0 to 70 or –40 to 85 °C; VCC = 4.75 to 5.5 V or 4.5 to 5.5 V (except where
noted).
2.
All voltages referenced to VSS.
Min
Typ
Max
Unit
VPFD
Power-fail deselect voltage
M48T35
4.5
4.6
4.75
V
M48T35Y
4.2
4.35
4.5
V
VSO
Battery backup switchover voltage
M48T35
3.0
V
M48T35Y
3.0
V
tDR
(3)(5)
3.
CAPHAT™ and M4T32-BR12SH1 SNAPHAT® only, M4T28-BR12SH1 SNAPHAT® top tDR = 7 years (typ).
Expected data retention time
Grade 1
10(4)
4.
Using larger M4T32-BR12SH6 SNAPHAT® top (recommended for industrial temperature range - grade 6 device).
Years
Grade 6
10(5)
5.
At 25 °C, VCC = 0 V.
Years



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