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M48T58 データシート(PDF) 21 Page - STMicroelectronics |
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M48T58 データシート(HTML) 21 Page - STMicroelectronics |
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21 / 33 page ![]() M48T58, M48T58Y Maximum ratings Doc ID 2412 Rev 8 21/33 7 Maximum ratings Stressing the device above the rating listed in the absolute maximum ratings table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 6. Absolute maximum ratings Caution: Negative undershoots below –0.3 V are not allowed on any pin while in the battery backup mode. Caution: Do NOT wave solder SOIC to avoid damaging SNAPHAT® sockets. Symbol Parameter Value Unit TA Ambient operating temperature 0 to 70 °C TSTG Storage temperature (VCC off, oscillator off) –40 to 85 °C TSLD (1)(2)(3) 1. For DIP package, soldering temperature of the IC leads is to not exceed 260 °C for 10 seconds. Furthermore, the devices shall not be exposed to IR reflow nor preheat cycles (as performed as part of wave soldering). ST recommends the devices be hand-soldered or placed in sockets to avoid heat damage to the batteries. 2. For DIP packaged devices, ultrasonic vibrations should not be used for post-solder cleaning to avoid damaging the crystal. 3. For SOH28 package, lead-free (Pb-free) lead finish: reflow at peak temperature of 260°C (the time above 255°C must not exceed 30 seconds). Lead solder temperature for 10 seconds 260 °C VIO Input or output voltages –0.3 to 7 V VCC Supply voltage –0.3 to 7 V IO Output current 20 mA PD Power dissipation 1 W |
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