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STPS20L120CFP データシート(PDF) 4 Page - STMicroelectronics |
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STPS20L120CFP データシート(HTML) 4 Page - STMicroelectronics |
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4 / 8 page ![]() Characteristics STPS20L120C 4/8 Doc ID 15670 Rev 1 Figure 11. Forward voltage drop vs. forward current (per diode) Figure 7. Relative variation of thermal impedance junction to case vs. pulse duration (TO-220AB) Figure 8. Relative variation of thermal impedance junction to case vs. pulse duration (TO-220FPAB) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-03 1.E-02 1.E-01 1.E+00 Single pulse Z/R th(j-c) th(j-c) t (s) p 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Single pulse Z/R th(j-c) th(j-c) t (s) p Figure 9. Reverse leakage current vs. reverse voltage applied (typical values, per diode) Figure 10. Junction capacitance vs. reverse voltage applied (typical values, per diode) 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 0 102030405060 708090 100 110 120 T j=150°C T j=125°C T j=25°C T j=100°C T j=75°C T j=50°C I (mA) R V (V) R 10 100 1000 1 10 100 1000 F=1MHz VOSC=30mVRMS Tj=25°C V (V) R C(pF) 0 20 40 60 80 100 120 140 160 180 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 T j=25°C (Maximum values) T j=125°C (Maximum values) T j=125°C (Maximum values) T j=125°C (Typical values) T j=125°C (Typical values) I (A) FM V (V) FM |
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