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STPS3150 データシート(PDF) 4 Page - STMicroelectronics |
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STPS3150 データシート(HTML) 4 Page - STMicroelectronics |
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4 / 10 page ![]() Characteristics STPS3150 4/10 Doc ID 9474 Rev 5 Figure 7. Normalized avalanche power derating versus pulse duration Figure 8. Normalized avalanche power derating versus junction temperature 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 P(tp) P (1µs) ARM ARM t (µs) p 0 0.2 0.4 0.6 0.8 1 1.2 25 50 75 100 125 150 P(T ) P (25 °C) ARM j ARM T (°C) j Figure 9. Relative variation of thermal impedance junction to ambient versus pulse duration Figure 10. Relative variation of thermal impedance junction to ambient versus pulse duration 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Z/R th(j-a) th(j-a) T δ=tp/T tp t (s) p SMB Single pulse 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Z/R th(j-a) th(j-a) T δ=tp/T tp t (s) p DO-201AD Single pulse Figure 11. Relative variation of thermal impedance junction to lead versus pulse duration Figure 12. Reverse leakage current versus reverse voltage applied (typical values) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Z/R th(j-l) th(j-l) SMB flat t (s) p Single pulse I (µA) R 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1.E+04 0 25 50 75 100 125 150 V (V) R T =125°C j T =150°C j T =100°C j T =50°C j T =25°C j T =75°C j |
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