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STPS30150C データシート(PDF) 4 Page - STMicroelectronics

部品番号 STPS30150C
部品情報  High voltage power Schottky rectifier
PDF  11 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS30150C データシート(HTML) 4 Page - STMicroelectronics

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Characteristics
STPS30150C
4/11
Doc ID 7757 Rev 8
Figure 5.
Non repetitive surge peak forward
current vs. overload duration (max.
values, per diode)
Figure 6.
Non repetitive surge peak forward
current vs. overload duration (max.
values, per diode) (TO-220FPAB)
0
25
50
75
100
125
150
175
200
225
1.E-03
1.E-02
1.E-01
1.E+00
IM
t
δ=0.5
I (A)
M
t(s)
Tc=50°C
Tc=75°C
Tc=125°C
TO-220AB, TO-247, D PAK
2
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
1.E-03
1.E-02
1.E-01
1.E+00
IM
t
δ=0.5
I (A)
M
t(s)
Tc=50°C
Tc=75°C
Tc=125°C
TO-220FPAB
Figure 7.
Variation of thermal impedance
junction to case versus pulse
duration (per diode)
Figure 8.
Variation of thermal impedance
junction to case versus pulse
duration (per diode) (TO-220FPAB)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
T
δ=tp/T
tp
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
Z/R
th(j-c)
th(j-c)
t (s)
p
TO-220AB, TO-247, D PAK
2
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
T
δ=tp/T
tp
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
Z/R
th(j-c)
th(j-c)
t (s)
p
TO-220FPAB
Figure 9.
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
Figure 10.
Junction capacitance versus
reverse voltage applied (typical
values, per diode)
0
2550
75
100
125
150
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
Tj=125°C
Tj=25°C
Tj=150°C
Tj=100°C
Tj=175°C
I (µA)
R
V (V)
R
12
5
10
20
50
100
200
10
100
1000
C(pF)
V (V)
R
F=1MHz
V
=30mV
T =25°C
OSC
RMS
j



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