UF5305L-TN3-R datasheet(2/6 Pages) UTC

2 / 6 page

UF5305

Preliminary

POWER MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-842.a

ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

-55

Gate-Source Voltage

VGSS

±20

Drain Current

Continuous

VGS=-10V, TC=25°C

-31

VGS=-10V, TC=100°C

-22

Pulsed (Note 2)

IDM

-110

Avalanche Current (Note 2)

IAR

-16

Avalanche Energy

Single Pulse (Note 3)

EAS

280

Repetitive (Note 2)

EAR

Peak Diode Recovery dv/dt (Note 4)

dv/dt

-5.0

V/ns

Power Dissipation (TC=25°C)

110

Linear Derating Factor

0.71

W/°C

Junction Temperature

-55~+150

°C

Storage Temperature Range

TSTG

-55~+150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive rating; pulse width limited by max. junction temperature.

3. VDD=-25V, Starting TJ=25°C, L=2.1mH, RG=25Ω, IAS=-16A.

4. ISD≤-16A, di/dt≤-280A/µs, VDD≤BVDSS, TJ≤150°C

THERMAL RESISTANCE

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

°C/W

Junction to Case

θJC

1.4

°C/W

UF5305L-TN3-R データシート(PDF) 2 Page - Unisonic Technologies

UF5305L-TN3-R データシート(HTML) 2 Page - Unisonic Technologies

Html Pages

1 2 3 4 5 6

データシートダウンロード