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データシートサーチシステム |
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BDT65B データシート(PDF) 3 Page - Comset Semiconductor |
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BDT65B データシート(HTML) 3 Page - Comset Semiconductor |
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3 / 5 page  BDT65-A-B-C 26/09/2012 COMSET SEMICONDUCTORS 3 | 5 SEMICONDUCTORS ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICBO Collector Cutoff Current IE= 0 VCB = VCBOmax BDT65 - - 0.4 mA BDT65A BDT65B BDT65C IE= 0 VCB = 1/2 VCBOmax TJ= 150 °C BDT65 - - 2 mA BDT65A BDT65B BDT65C ICEO Collector Cutoff Current IE= 0 VCE = 1/2 VCEOmax BDT65 - - 0.2 mA BDT65A BDT65B BDT65C IEBO Emitter Cutoff Current VEB= 5 V IC= 0 BDT65 - - 5 mA BDT65A BDT65B BDT65C VCEO Collector-Emitter Breakdown Voltage IC= 30 mA IB= 0 BDT65 60 - - V BDT65A 80 - - BDT65B 100 - - BDT65C 120 - - VCE(SAT) Collector-Emitter saturation Voltage (*) IC= 5 A IB= 20 mA BDT65 - - 2 V BDT65A BDT65B BDT65C IC= 10 A IB= 100 mA BDT65 - - 3 BDT65A BDT65B BDT65C |
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