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BUW13 データシート(PDF) 1 Page - Comset Semiconductor |
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BUW13 データシート(HTML) 1 Page - Comset Semiconductor |
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1 / 3 page ![]() NPN BUW13 - BUW13A COMSET SEMICONDUCTORS 1/3 The BUW13-A are silicon NPN power transistor in TO3PN package. They are intended for use in switching regulators, motor control systems, inverters and converters. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BUW13 BUW13A VCEO Collector-Emitter Voltage IB = 0 400 450 V VCBO Collector-Base Voltage IE = 0 850 1000 V VEBO Emitter-Base Voltage IC = 0 9 V IC Collector Current 15 A ICM Collector Current Peak 30 A IB Base Current 6 A IBM Base Current Peak 9 A Pt Total Power Dissipation @ TC = 25° 175 Watts TJ Junction Temperature 150 °C TStg Storage Temperature -65 to 175 °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJC Thermal Resistance, Junction to Case 0.7 °C/W H HIIG GH H V VO OL LT TA AG GE E,, H HIIG GH H S SP PE EE ED D P PO OW WE ER R T TR RA AN NS SIIS ST TO OR R |
同様の部品番号 - BUW13 |
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同様の説明 - BUW13 |
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