DTS2012 datasheet(4/9 Pages) DINTEK

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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Normalized On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

- 50

- 25

100

125

150

J - Junction Temperature (°C)

GS = 4.5 V; ID = 3.7 A

GS = 10 V; ID = 3.7 A

GS = 2.5 V; ID = 1.5 A

0.02

0.04

0.06

0.08

0.10

0.0

2.0

4.0

6.0

8.0

10.0

GS - Gate-to-Source Voltage (V)

D = 3.7 A

J = 125 °C

J = 25 °C

Time (s)

1000

0.1

0.01

0.001

100

Source-Drain Diode Forward Voltage

Threshold Voltage

Safe Operating Area, Junction-to-Ambient

0.1

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD - Source-to-Drain Voltage (V)

J = 25 °C

J = 150 °C

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

- 50

- 25

100

125

150

J -Temperature (°C)

D = 250 μA

0.01

0.1

100

0.1

100

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

10 s

100 ms

Limited by R

DS(on)*

1 ms

Single Pulse

A = 25 °C

BVDSS Limited

10 ms

100 μs

1 s

DTS

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