27291SL datasheet(12/20 Pages) FREESCALE

12 / 20 page

RF Device Data

Freescale Semiconductor

MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5

TYPICAL CHARACTERISTICS — 470--860 MHz REFERENCE CIRCUIT

1000

Pout, OUTPUT POWER (WATTS) PULSED

Figure 16. Broadband Pulsed Power Gain and Drain

Efficiency versus Output Power — 470--860 MHz

100

Gps

ηD

--13

--6

900

450

IRL

Gps

f, FREQUENCY (MHz)

Figure 17. Broadband Pulsed Power Gain, Drain

Efficiency and IRL versus Frequency

800

750

700

650

600

550

500

ηD

--5

--11

Figure 18. DVB--T (8k OFDM) Drain Efficiency, Power Gain and

IMD Shoulder versus Output Power — 470--860 MHz

5--35

Pout, OUTPUT POWER (WATTS) AVG.

--5

--15

--25

Gps

VDD =50 Vdc,IDQ = 1400 mA

DVB--T (8k OFDM), 64 QAM Data

Carrier Modulation, 5 Symbols

200

ηD

860 MHz

850

--7

IMD(1)

VDD =50 Vdc,Pout = 600 W Peak, IDQ = 1400 mA

Pulse Width = 100 μsec, Duty Cycle = 10%

665 MHz

470 MHz

860 MHz

470 MHz

665 MHz

470 MHz

860 MHz

665 MHz

470 MHz

665 MHz

470 MHz

860 MHz

--10

--20

--30

400

VDD =50 Vdc,IDQ = 1400 mA

Pulse Width = 100 μsec

Duty Cycle = 10%

860 MHz

120

160

(1) Intermodulation distortion shoulder measurement made using

delta marker at 4.2 MHz offset from center frequency.

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