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RF--35 データシート(PDF) 12 Page - Freescale Semiconductor, Inc

部品番号 RF--35
部品情報  RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs
PDF  20 Pages
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メーカー  FREESCALE [Freescale Semiconductor, Inc]
ホームページ  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

RF--35 データシート(HTML) 12 Page - Freescale Semiconductor, Inc

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RF Device Data
Freescale Semiconductor, Inc.
MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
TYPICAL CHARACTERISTICS — 470--860 MHz BROADBAND REFERENCE CIRCUIT
26
10
70
f, FREQUENCY (MHz)
Figure 23. Single--Carrier DVB--T (8k OFDM) Power Gain and Drain
Efficiency versus Frequency (Broadband Reference Circuit)
450
50
40
30
20
Gps
ηD
60
Pout =4.5 W
9W
VDD =50 Vdc,IDQ = 450 mA, DVB--T (8k OFDM)
64 QAM Data Carrier Modulation, 5 Symbols
24
22
20
18
16
14
500
550
600
650
700
750
800
850
900
18 W
4.5 W
9W
18 W
12
--50
10
f, FREQUENCY (MHz)
Figure 24. Single--Carrier DVB--T (8k OFDM) Output PAR and IMD
Shoulder versus Frequency (Broadband Reference Circuit)
450
--10
--20
--30
--40
0
Pout =4.5 W
9W
VDD =50 Vdc,IDQ = 450 mA, DVB--T (8k OFDM)
64 QAM Data Carrier Modulation, 5 Symbols
10
8
6
4
2
0
500
550
600
650
700
750
800
850
900
18 W
4.5 W
9W
18 W
(1) Intermodulation distortion shoulder measurement made using
delta marker at 4.2 MHz offset from center frequency.
26
20
80
Pout, OUTPUT POWER (WATTS) PULSED
Figure 25. Pulsed Power Gain and Drain Efficiency
versus Output Power (Broadband Reference Circuit)
0
60
50
40
30
Gps
ηD
70
VDD =50 Vdc,IDQ = 450 mA
Pulse Width = 100 μsec, 10% Duty Cycle
24
22
20
18
16
14
20
40
60
80
100
120
140
160
470 MHz
600 MHz
750 MHz
750 MHz
600 MHz
470 MHz
860 MHz
860 MHz
PAR
IMD(1)



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