AOD404_08 datasheet(2/6 Pages) AOSMD

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AOD404

Symbol

Min

Typ

Max

Units

BVDSS

TJ=55°C

IGSS

100

VGS(th)

1.6

ID(ON)

5.4

TJ=125°C

8.4

10.5

6.6

mΩ

gFS

VSD

0.74

Ciss

2100

2520

Coss

536

Crss

165

231

0.5

0.95

1.2

Ω

Qg(4.5V)

19.7

Qgs

3.6

Qgd

7.9

tD(on)

5.9

tD(off)

36.2

trr

Qrr

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

VGS=10V, VDS=5V

VGS=10V, ID=20A

Reverse Transfer Capacitance

IF=20A, dI/dt=100A/µs

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

µA

Gate Threshold Voltage

VDS=VGS ID=250µA

VDS=30V, VGS=0V

VDS=0V, VGS= ±12V

Zero Gate Voltage Drain Current

Gate-Body leakage current

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

DYNAMIC PARAMETERS

mΩ

VGS=4.5V, ID=20A

IS=1A,VGS=0V

VDS=5V, ID=20A

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=15V, RL=0.75Ω,

RGEN=3Ω

Turn-Off Fall Time

Turn-On DelayTime

Gate Drain Charge

VGS=0V, VDS=15V, f=1MHz

SWITCHING PARAMETERS

Total Gate Charge

Gate Source Charge

Gate resistance

VGS=0V, VDS=0V, f=1MHz

VGS=4.5V, VDS=15V, ID=20A

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

Power dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any a given

application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.

B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

F. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA

curve provides a single pulse rating.

G. The maximum current rating is limited by the package current capability.

*This device is guaranteed green after data code 8X11 (Sep 1

ST 2008).

Rev 8: Sep 2008

Alpha & Omega Semiconductor, Ltd.

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