PSMN4R2-60PL datasheet(7/13 Pages) NXP

部品番号	PSMN4R2-60PL

部品情報	N-channel 60 V, 3.9 m廓 logic level MOSFET in SOT78

PDF	13 Pages

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メーカー	NXP [NXP Semiconductors]

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NXP Semiconductors

PSMN4R2-60PL

N-channel 60 V, 3.9 mΩ logic level MOSFET in SOT78

PSMN4R2-60PL

All information provided in this document is subject to legal disclaimers.

Product data sheet

5 February 2013

7 / 13

003aah907

120

240

360

VGS(V)

(A)

Tj = 25 °C

Tj = 175 °C

Fig. 8. Transfer characteristics; drain current as a

function of gate-source voltage; typical values

003aah025

0.5

1.5

2.5

-60

120

180

Tj (°C)

VGS(th)

(V)

max

typ

min

Fig. 9. Gate-source threshold voltage as a function of

junction temperature

003aah026

10-6

10-5

10-4

10-3

10-2

10-1

VGS (V)

(A)

max

typ

min

Fig. 10. Sub-threshold drain current as a function of

gate-source voltage

003aah910

120

180

ID(A)

RDSon

(mΩ)

4.5

VGS(V) = 10

2.8

2.6

Tj = 25 °C; tp = 300 μs

Fig. 11. Drain-source on-state resistance as a function

of drain current; typical values

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