AP7175

Document number: DS35606 Rev. 3 - 2

3 of 14

www.diodes.com

December 2012

© Diodes Incorporated

AP7175

Symbol

Parameter

Rating

Unit

-0.3 to +4.0

V

-0.3 to +7.0

V

V

PG to GND Voltage

-0.3 to +7.0

V

EN, FB to GND Voltage

V

Power Dissipation (SO-8EP)

1.7

W

Power Dissipation (MSOP-8EP)

1.5

Maximum Junction Temperature

150

°C

Storage Temperature

-65 to +150

°C

Maximum Lead Soldering Temperature, 10 Seconds

260

°C

Note:

4. Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;

functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may

be affected by exposure to absolute maximum rating conditions for extended periods of time.

Symbol

Parameter

Min

Max

Unit

3.0

5.5

V

1.2

3.65

V

0.8

V

Continuous Current

0

3

A

Peak Current

0

4

8

1100

µF

8

1700

8

2400

0

200

m

Ω

Ambient Temperature

-40

+85

°C

Junction Temperature

-40

+125

°C