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OP176GS データシート(PDF) 12 Page - Analog Devices

部品番号 OP176GS
部品情報  Bipolar/JFET, Audio Operational Amplifier
PDF  21 Pages
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ホームページ  http://www.analog.com
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OP176GS データシート(HTML) 12 Page - Analog Devices

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OP176
REV. 0
–12–
A Low Noise Microphone Preamplifier with a Phantom
Power Option
Figure 39 is an example of a circuit that combines the strengths
of the SSM2017 and the OP176 into a variable gain micro-
phone preamplifier with an optional phantom power feature.
The SSM2017’s strengths lie in its low noise and distortion, and
gain flexibility/simplicity. However, rated only for 2 k
Ω or
higher loads, this makes driving 600
Ω loads somewhat limited
with the SSM2017 alone. A pair of OP176s are used in the
circuit as a high current output buffer (U2) and a DC servo
stage (U3). The OP176’s high output current drive capability
provides a high level drive into 600
Ω loads when operating
from
±18 V supplies. For a complete treatment of the circuit
design details, the interested reader should consult application
note AN-242, available from Analog Devices.
This amplifier’s performance is quite good over programmed
gain ranges of 2 to 2000. For a typical audio load of 600
Ω,
THD + N at various gains and an output level of 10 V rms is
illustrated in Figure 40. For all but the very highest gain, the
THD + N is consistent and well below 0.01%, while the gain of
2000 becomes more limited by noise. The noise performance of
the circuit is exceptional with a referred-to-input noise voltage
spectral density of 1 nV/
√Hz at a circuit gain of 1000.
1.0
0.1
0.010
0.001
20
100
1k
10k
20k
G = 2000
G = 200
G = 20
G = 4
±V
S = ±18V
80kHz LPF
Figure 40. Low Noise Microphone Preamplifier THD + N
Performance at Various Gains (V
OUT = 10 V rms and
R
L = 600 Ω)
Figure 39. A Low Noise Microphone Preamplifier
+
+
+
+
+
R10
100
+48V
R9
6.81k
R8
6.81k
C8
47µF/
63V
PHANTOM POWER SUPPLY CONNECTIONS,
INTERLOCKED WITH +/–VS (SEE NOTE 5).
Z1
Z2
TO MICROPHONE
–IN
+IN
R
P1
49.9
CIN1
47µF/
63V
R
P2
49.9
CIN2
47µF/
63V
COMMON
Z3
Z4
CG2
2200µF/ 10V
CG1
2200µF/ 10V
RG
RB1
10k
RB2
10k
CN
4.7nF/
FILM
1)
3)
+VS
3
8 1
2
6
5
4
7
U1
SSM2017P
–VS
CRF2
100pF
CRF1
100pF
R1
10k
R6
10k
R7
1k
C5
33pF
OUTPUT
6
4
2
3
7
6
2
3
R3
49.9
R5
221k
R2
20k
C1
1µF FILM
R4
221k
D1
D2
1N458
+VS
–VS
U2
OP176
U3
OP176
C2
1µF FILM
OUT COMMON
NOTES:
1) Z1–Z4 1N752 (SEE TEXT).
2) CINX, CGX LOW LEAKAGE ELECTROLYTIC TYPES (SEE TEXT).
3) GAIN = G = 2 x ((10k/RG ) +1) (SEE TEXT).
4) ALL RESISTORS 1% METAL FILM.
5) DOTTED PHANTOM POWER RELATED COMPONENTS OPTIONAL (SEE TEXT).
+VS
–VS
+18V
–18V
C6
0.1µF
C7
0.1µF
C3
100µF/25V
C4
100µF/25V
+
+
1N458
4
7
–VS
+VS



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