OP186 datasheet(3/12 Pages) AD

3 / 12 page

–3–

REV. 0

OP186

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Conditions

Min

Typ

Max

Units

INPUT CHARACTERISTICS

Offset Voltage

VOS

0.6

–40

°C ≤ T

≤ +125°C6

Input Bias Current

–40

°C ≤ T

≤ +125°C10

Input Offset Current

IOS

0.1

–40

°C ≤ T

≤ +125°C5

Input Voltage Range

VCM

1.7

Common-Mode Rejection Ratio

CMRR

VCM = 0 V to 1.7 V

–40

°C ≤ T

≤ +125°C60

Large Signal Voltage Gain

AVO

RL = 1 M

Ω, V

O = 0.3 V to 2.4 V

V/mV

–40

°C ≤ T

≤ +125°C

V/mV

Offset Voltage Drift

∆V

OS/

∆T

3.5

µV/°C

Bias Current Drift

∆I

∆T

pA/

°C

Offset Current Drift

∆I

OS/

∆T

pA/

°C

OUTPUT CHARACTERISTICS

Output Voltage High

VOH

RL = 100 k

Ω to GND

2.625

2.665

–40

°C to +125°C

2.6

Output Voltage Low

VOL

RL = 100 k

Ω to V+

–40

°C to +125°C75

Short Circuit Limit

ISC

±0.8

POWER SUPPLY

Power Supply Rejection Ratio

PSRR

VS = 2.7 V to 12 V

–40

°C ≤ T

≤ +125°C76

Supply Current/Amplifier

ISY

4.2

5.5

µA

–40

°C ≤ T

A ≤ +125°C7

µA

DYNAMIC PERFORMANCE

Slew Rate

RL =100 k

Ω, C

L = 15 pF

V/ms

Turn-On Time

AV = 1, VO = 1

µs

AV = 20, VO = 1

µs

Gain Bandwidth Product

GBP

155

kHz

Phase Margin

Φo

Degrees

NOISE PERFORMANCE

Voltage Noise Density

f = 1 kHz

nV/

√Hz

Current Noise Density

pA/

√Hz

NOTES

1+2.7 V specifications are guaranteed by +2.2 V and

±5 V testing.

OS is tested under a no load condition.

Specifications subject to change without notice.

(VS = +2.7 V, VCM = +1.35 V, TA = +25 C unless otherwise noted)

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