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APT6021BLL データシート(PDF) 2 Page - Advanced Power Technology |
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APT6021BLL データシート(HTML) 2 Page - Advanced Power Technology |
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2 / 2 page ![]() DYNAMIC CHARACTERISTICS APT6021 BLL - SLL 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) BSC 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) Drain Source Gate 5.45 (.215) BSC Dimensions in Millimeters and (Inches) 2-Plcs. TO-247 Package Outline 15.95 (.628) 16.05 (.632) 1.22 (.048) 1.32 (.052) 5.45 (.215) BSC {2 Plcs.} 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105) 2.84 (.112) 0.46 (.018) {3 Plcs} 0.56 (.022) Dimensions in Millimeters (Inches) Heat Sink (Drain) and Leads are Plated 3.81 (.150) 4.06 (.160) (Base of Lead) 1.98 (.078) 2.08 (.082) Gate Drain Source 0.020 (.001) 0.178 (.007) 1.27 (.050) 1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528) 13.51 (.532) Revised 8/29/97 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) Revised 4/18/95 D 3 PAK Package Outline APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 ADVANCE TECHNICAL INFORMATION Symbol C iss C oss C rss Q g Q gs Q gd t d(on) t r t d(off) t f Test Conditions V GS = 0V V DS = 25V f = 1 MHz V GS = 10V V DD = 0.5 V DSS I D = I D[Cont.] @ 25°C V GS = 15V V DD = 0.5 V DSS I D = I D[Cont.] @ 25°C R G = 1.6 W MIN TYP MAX 3310 590 37 76 18 34 15 10 35 10 UNIT pF nC ns Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (V GS = 0V, I S = -I D[Cont.] ) Reverse Recovery Time (I S = -I D[Cont.] , dl S /dt = 100A/µs) Reverse Recovery Charge (I S = -I D[Cont.] , dl S /dt = 100A/µs) Peak Diode Recovery dv/dt 5 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts ns µC V/ns MIN TYP MAX 29 116 1.3 580 12.0 8 1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471 temperature. 4 Starting Tj = +25°C, L = 3.09mH, RG = 25W, Peak IL = 29A 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 5dv/ dt numbers reflect the limitations of the test circuit rather than the device itself. I S £ -I D [Cont.] di/ dt £ 700A/µs V R £ V DSS T J £ 150 °C APT Reserves the right to change, without notice, the specifications and information contained herein. THERMAL CHARACTERISTICS Symbol RqJC RqJA MIN TYP MAX 0.31 40 UNIT °C/W Characteristic Junction to Case Junction to Ambient Symbol I S I SM V SD t rr Q rr dv/ dt |
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