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ACTPD1M16 データシート(PDF) 4 Page - Aeroflex Circuit Technology

部品番号 ACTPD1M16
部品情報  ACT-PD1M16 Fast Page Mode 16 Megabit Plastic Monolithic DRAM
PDF  9 Pages
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メーカー  AEROFLEX [Aeroflex Circuit Technology]
ホームページ  http://www.aeroflex.com
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ACTPD1M16 データシート(HTML) 4 Page - Aeroflex Circuit Technology

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SCD3750 REV A 8/31/98
Plainview NY (516) 694-6700
4
Setup Time, WE Low before CAS Low (early-write operation only)
tWCS
0
-
ns
Hold Time, Column Address after CAS Low
tCAH
15
-
ns
Hold Time, Data 5
tDH
15
-
ns
Hold Time, Row Address after RAS Low
tRAH
10
-
ns
Hold Time, WE High after CAS High 6
tRCH
0
-
ns
Hold Time, WE High after RAS High 6
tRRH
0
-
ns
1. All cycle times assume tT= 5ns, reference to VIH (min) and VIL (max).
2. To assume tPC min, tASC should be
≥ tCP.
3. In read-write cycle, tRWD and tRWL must be observed.
4. In read-write cycle, tCWD and tCWL must be observed.
5. Referenced to the later of xCAS or WE in write operations.
6. Either tRRH or tRCH must be satisfied for a read cycle.
AC Characteristics
(VCC = 5.0V, VSS = 0V, TCI or TCM)
Parameter
Sym
Min Max
Units
WE Low before CAS Low Hold Time (early-write operation only)
tWCH
15
-
ns
OE Command Hold Time
tOEH
15
-
ns
RAS Referenced to OE Hold Time
tROH
10
-
ns
RAS from CAS Precharge (Fast Page Mode)
tRHCP
40
-
ns
Column Address to WE Low Delay Time (read-write operation only)
tAWD
60
-
ns
RAS Low to CAS High Delay Time (CBR refresh only)
tCHR
15
-
ns
CAS High to RAS Low Delay Time (CAS to RAS Precharge Time)
tCRP
5
-
ns
RAS Low to CAS High Delay Time (CAS Hold Time)
tCSH
70
-
ns
CAS Low to RAS Low Delay Time (CAS Set-up Time)
tCSR
5
-
ns
CAS Low to WE Low Delay Time (read-write operation only)
tCWD
45
-
ns
OE to Data Delay Time
tOED
15
-
ns
RAS Low to Column Address Delay Time 1
tRAD
15
35
ns
Column Address to RAS High Delay Time
tRAL
35
-
ns
RAS Low to CAS Low Delay Time 1
tRCD
20
50
ns
RAS High to CAS Low Precharge Time
tRPC
5
-
ns
CAS Low to RAS High Delay Time (RAS Hold Time)
tRSH
20
-
ns
RAS Low to WE Low Delay Time (read-write operation only)
tRWD
95
-
ns
WE Low after CAS Precharge Delay Time (read-write operation only)
tCWD
65
-
ns
Refresh Time Interval
tREF
16
ms
Transition time 2
tT
3
50
ns
1. The maximum value is specified only to assure access time
2. Transition times (rise and fall) for RAS and xCAS are to be a minimum of 3ns and a maximum of 30ns.
AC Characteristics (continued)
(VCC = 5.0V, VSS = 0V, TCI or TCM)
Parameter
Sym
Min Max
Units



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