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ACTS512K8 データシート(PDF) 3 Page - Aeroflex Circuit Technology

部品番号 ACTS512K8
部品情報  ACT-S512K8 High Speed 4 Megabit Monolithic SRAM
PDF  8 Pages
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メーカー  AEROFLEX [Aeroflex Circuit Technology]
ホームページ  http://www.aeroflex.com
Logo AEROFLEX - Aeroflex Circuit Technology

ACTS512K8 データシート(HTML) 3 Page - Aeroflex Circuit Technology

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SCD1664 REV C 5/10/00
Plainview NY (516) 694-6700
3
AC Characteristics
(VCC = 5.0V, VSS= 0V, Tc= -55°C to +125°C)
Read Cycle
Parameter
Sym
–017
Min Max
–020
Min Max
–025
Min Max
–035
Min Max
–045
Min Max
–055
Min Max
Units
Read Cycle Time
tRC
17
-
20
-
25
-
35
-
45
-
55
-
ns
Address Access Time
tAA
-
17
-
20
-
25
-
35
-
45
-
55
ns
Chip Select Access Time
tACS
-
17
-
20
-
25
-
35
-
45
-
55
ns
Output Hold from Address Change
tOH
0
-
0
-
0
-
0
-
0
-
0
-
ns
Output Enable to Output Valid
tOE
-
9
-
10
-
12
-
25
25
25
ns
Chip Select to Output in Low Z (1)
tCLZ
2
-
2
-
2
-
4
-
4
-
4
-
ns
Output Enable to Output in Low Z (1)
tOLZ
0
-
0
-
0
-
0
-
0
-
0
-
ns
Chip Deselect to Output in High Z (1)
tCHZ
-
9
-
10
-
12
-
15
-
20
-
20
ns
Output Disable to Output in High Z (1)
tOHZ
-
9
-
10
-
12
-
15
-
20
-
20
ns
Note 1. Guaranteed by design, but not tested
Write Cycle
Parameter
Sym
–017
Min Max
–020
Min Max
–025
Min Max
–035
Min Max
–045
Min Max
–055
Min Max
Units
Write Cycle Time
tWC
17
-
20
-
25
-
35
-
45
-
55
-
ns
Chip Select to End of Write
tCW
15
-
15
-
20
-
25
-
35
-
50
-
ns
Address Valid to End of Write
tAW
15
-
15
-
20
-
25
-
35
-
50
-
ns
Data Valid to End of Write
tDW
12
-
12
-
15
-
20
-
25
-
25
-
ns
Write Pulse Width
tWP
14
-
14
-
15
-
25
-
35
-
40
-
ns
Address Setup Time
tAS
2
-
2
-
2
-
2
-
2
-
2
-
ns
Address Hold Time
tAH
0
-
0
-
0
-
0
-
5
-
5
-
ns
Output Active from End of Write (1)
tOW
0
-
0
-
0
0
5
-
5
-
ns
Write to Output in High Z (1)
tWHZ
-
9
-
9
-
10
-
15
-
20
-
25
ns
Data Hold from Write Time
tDH
0
-
0
-
0
-
0
-
0
-
0
-
ns
Note 1. Guaranteed by design, but not tested
Data Retention Electrical Characteristics (Special Order Only)
(Tc = -55°C to +125°C)
Parameter
Sym
Test Conditions
ALL SPEEDS
Min
Typ
Max
Units
VCC for Data Retention
VDR
CE
≥ V
CC – 0.2V
2
-
5.5
V
Data Retention Current (1) ICCDR1
VCC = 3V
-
0.5
7.0
mA
Available in Low Power version. Call For Information.
Truth Table
Mode
CE
OE
WE
Data I/O
Power
Standby
H
X
X
High Z
Standby (deselect/power down)
Read
L
L
H
Data Out
Active
Output Disable
L
H
H
High Z
Active (deselected)
Write
L
X
L
Data In
Active



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