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Motorola TMOS Power MOSFET Transistor Device Data

Designer's™ Data Sheet

Medium Power Surface Mount Products

TMOS Dual P-Channel

Field Effect Transistors

Dual HDTMOS devices are an advanced series of power

MOSFETs which utilize Motorola’s High Cell Density TMOS

process. Dual HDTMOS devices are designed for use in low

voltage, high speed switching applications where power efficiency

is important. Typical applications are dc–dc converters, and power

management in portable and battery powered products such as

computers, printers, cellular and cordless phones. They can also

be used for low voltage motor controls in mass storage products

such as disk drives and tape drives.

• Low RDS(on) Provides Higher Efficiency and Extends Battery Life

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Miniature SO–8 Surface Mount Package — Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• IDSS Specified at Elevated Temperature

• Mounting Information for SO–8 Package Provided

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

30

Vdc

Gate–to–Source Voltage — Continuous

VGS

± 20

Vdc

Drain Current — Continuous @ TA = 25°C

ID

IDM

3.0

15

Adc

Apk

Source Current — Continuous @ TA = 25°C

IS

2.5

Adc

Total Power Dissipation @ TA = 25°C (1)

PD

2.0

Watts

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 150

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 W)

EAS

450

mJ

Thermal Resistance — Junction–to–Ambient

R

θJA

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8

″ from Case for 10 sec.

TL

260

°C

DEVICE MARKING

D3P03

(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.

ORDERING INFORMATION

Device

Reel Size

Tape Width

Quantity

MMDF3P03HDR2

13

″

12 mm embossed tape

2500

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MMDF3P03HD/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Source–1

1

2

3

4

8

7

6

5

Top View

Gate–1

Source–2

Gate–2

Drain–1

Drain–1

Drain–2

Drain–2

D

S

G

CASE 751–05, Style 11

SO–8

MMDF3P03HD

DUAL TMOS

POWER MOSFET

30 VOLTS

RDS(on) = 100 mW

Motorola Preferred Device

™

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