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STM32F051C8T6 データシート(PDF) 61 Page - STMicroelectronics |
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STM32F051C8T6 データシート(HTML) 61 Page - STMicroelectronics |
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61 / 104 page ![]() Electrical characteristics STM32F051x 62/105 Doc ID 022265 Rev 3 Figure 15. Typical application with a 32.768 kHz crystal Note: An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one. 6.3.7 Internal clock source characteristics The parameters given in Table 38 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 20. High-speed internal (HSI) RC oscillator Table 38. HSI oscillator characteristics(1) 1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - 8 MHz TRIM HSI user trimming step - - 1(2) 2. Guaranteed by design, not tested in production. % DuCy(HSI) Duty cycle 45(2) -55(2) % ACCHSI Accuracy of the HSI oscillator (factory calibrated) TA = –40 to 105 °C –3.8(3) 3. Data based on characterization results, not tested in production. -4.6(3) % TA = –10 to 85 °C –2.9(3) -2.9(3) % TA = 0 to 70 °C –1.3(3) -2.2(3) % TA = 25 °C –1 - 1 % tsu(HSI) HSI oscillator startup time 1(2) -2(2) µs IDD(HSI) HSI oscillator power consumption - 80 100(2) µA |
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