ACE1613B datasheet(2/6 Pages) ACE

2 / 6 page

ACE1613B

N-Channel Enhancement Mode MOSFET

VER 1.2

Ordering information

ACE1613B XX + H

Electrical Characteristics

TA=25℃, unless otherwise specified.

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V, ID=250uA

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=250uA

1.5

1.8

2.4

Gate Leakage Current

IGSS

VDS=0V,VGS=±20V

±100

Zero Gate Voltage Drain

Current

IDSS

VDS=24V, VGS=0V

Drain-Source

On-Resistance

RDS(ON)

VGS=10V, ID=40A

4.8

6.0

VGS=4.5V, ID=20A

6.0

9.0

Forward Transconductance

gfs

VDS=5V,ID=5A

7.3

Diode Forward Voltage

VSD

IS=10A, VGS=0V

0.86

Turn-On Delay Time

td(on)

VGS=10V, IDS=1A, VDS=15V,

RGEN=6Ω, RL=15Ω

Turn-Off Delay Time

td(off)

Input Capacitance

Ciss

VGS=0V, VDS=15V, f=1MHz

2650

Output Capacitance

Coss

910

Reverse Transfer

Capacitance

Crss

774

Note:

1. DUT is mounted on a 1in 2 FR-4 board with 2oz. Copper in a still air environment at 25°C, the current rating is based on the DC

（<10s）test conditions.

2. Repetitive rating, pulse width limited by junction temperature. 300us Pulse Drain Current Tested.

3. Current limited by bond wire.

YM : TO-252

Pb - free

Halogen - free

ACE1613B データシート(PDF) 2 Page - ACE Technology Co., LTD.

ACE1613B データシート(HTML) 2 Page - ACE Technology Co., LTD.

Html Pages

1 2 3 4 5 6

データシートダウンロード